resistance random access memory

The properties of Pr 0.7 Ca 0.3 MnO 3 resistance random access memory devices have been studied in terms of electrical pulse width, pulse polarity, film thickness, resistivity distribution, temperature dependence, device impedance, and dynamics property. Such resistance modulation usually involves ion migration and fi lament formation, which usually lead to relatively low device reliability and yield. RAM critically depends on being able to distinguish two different values (“on” and “off”, for example) by examining retained state information. It can be found the Ag/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. A resistance random access memory in a bridge structure is disclosed that comprises a contact structure where first and second electrodes are located within the contact structure. Resistors cannot retain state. With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. In this chapter, MLC storage and resistance variability and reliability of multilevel in ReRAM are discussed. PY - 2020/5. What is a “resistance random access memory”? In recent years, continuous improvement and in-depth investigation in both materials and electrical switching mechanism not only make a breakthrough in performance of digital non-volatile memory but also look for other possibility of memory functionality. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. CBRAM is a promising type of resistive non-volatile memory which relies on metal ion transport and redox reactions to form a persistent conducting filament in a high resistance film. The first electrode has a circumferential extending shape, such as an annular shape, surrounding an inner wall of the contact structure. Such resistance modulation usually involves ion migration and filament formation, which usually lead to relatively low device reliability and yield. Resistance random access memory Author: Chang, Ting-Chang Chang, Kuan-Chang Tsai, Tsung-Ming Chu, Tian-Jian Sze, Simon M. Journal: Materials Today Issue Date: 2015 Page: S1369702115003843. Resistive Random Access Memory (ReRAM) Based on Metal Oxides Abstract: In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future. Seungwook Kim. Resistance random access memory is a promising next-generation non-volatile memory device due to its simple capacitor-like structure, ultrafast switching, and extended retention. Reliable and reproducible bipolar resistance memory switching performances are achieved. Reliable and reproducible bipolar resistance memory switching performances are achieved. However, their capacity is limited by sneak paths and the sensitivity of the sense amplifiers (SA). Both lowering the “reset” current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. Fast and stable switching behaviour … What does RRAM stand for? Department of Materials Science and Engineering, Korea University, Seoul 136‐713, Republic of Korea. Phase-change random access memory, P-RAM, is a form of non-volatile memory or computer storage that is faster than the much more commonly used Flash memory technology. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration–dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. We present a review on the subject of Conductive Bridging Random Access Memory (CBRAM) based on copper- or silver-doped silicon dioxide. Emerging Resistive Random Access Memories (RRAM) devices are an attractive option for future memory architectures due to their low-power and high density. To analyze this method, the ITO/ZnO:SiO 2 /ZnOx/TiN bilayer structure was proposed and discussed. Low power consumption resistance random access memory with Pt/InO x/TiN structure Jyun-Bao Yang,1 Ting-Chang Chang,1,2,3,a) Jheng-Jie Huang,2 Yu-Ting Chen,1 Hsueh-Chih Tseng,2 Ann-Kuo Chu,1 Simon M. Sze,2,4 and Ming-Jinn Tsai5 1Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan 2Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan Flexible and fully biodegradable resistance random access memory based on a gelatin dielectric Nanotechnology. Based on the experimental data it is concluded that the resistance increase is due to localization of valence electrons. 2020 Apr 3;31(25):255204. doi: 10.1088/1361-6528/ab7a2c. Control of the resistance of resistance random access memories by MOSFET 北大・院情報 , 九工大・生命体工 2 廣井孝弘 , 中根明俊 , 勝村玲音 , 福地厚 , 有田正志 , 高橋庸夫 , 浦邊大史 , 安藤秀幸 , 森江隆 2 Hokkaido Univ., Kyushu Inst. Based on the experimental data it is concluded that the resistance increase is due to localization of valence electrons. ReRAM: Resistive random access memory. Based on first principles calculations and transition state theory, using SrZrO3 (SZO) as … Search for more papers by this author. A memory comprises a number of word lines in a first direction, a number of bit lines in a second direction, each coupled to at least one of the word lines, and a number of memory elements, each coupled to one of the word lines and one of the bit lines. To surmount the technical and physical limitation issues of conventional charge storage-based memories [13-17], the resistance random access memory (RRAM) is a kind of promising NVM due to its superior characteristics such as low cost, simple structure, high-speed operation, non-destructive readout, and the compatibility in the semiconductor industry [18-39]. Resistance Random Access Memory Based on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis. Resistance switching random-access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND flash memory. Abstract: A method of fabricating a RRAM includes preparing a substrate and forming a bottom electrode ori the substrate. Department of Materials Science and Engineering, Korea University, Seoul 136‐713, Republic of Korea . Fast and stable … AU - Jeon, Dong Su. Authors Shuting Liu 1 , Shurong Dong, Xingang Wang, Lin Shi, Hongsheng Xu, Shuyi Huang, Jikui Luo. A transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. The present invention provides a resistance random access memory structure, including a plurality of word lines in a substrate, a plurality of reset lines coupled to the word lines, a dielectric layer on the substrate, a plurality of memory units in the dielectric layer. Resistance random access memory devices and method of fabrication . AU - Dongale, Tukaram D. AU - Kim, Tae Geun. In this paper, a nonvolatile resistance random access memory (RRAM) device based on ZnO nanorod arrays has been fabricated and characterized. Yong Chan Ju. This effect may be reversed to return the device to a high resistance state. The properties of Pr 0.7 Ca 0.3 Mn O 3 resistance random access memory devices have been studied in terms of electrical pulse width, pulse polarity, film thickness, resistivity distribution, temperature dependence, device impedance, and dynamics property. AU - Kang, Dae Yun. The device is based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes. @article{osti_22596644, title = {Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current}, author = {Lin, Chun-Cheng and Department of Mathematic and Physical Sciences, R.O.C. Resistance switching random-access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND fl ash memory. Phase change memory can be referred to by a number of names including P-RAM or PRAM, PC-RAM, phase change RAM, and possibly more. AU - Park, Ju Hyun. Air Force Academy, Kaohsiung 820, Taiwan and Tang, Jian-Fu and Su, Hsiu-Hsien and Hong, Cheng-Shong and Huang, Chih-Yu and Chu, Sheng-Yuan … What is the abbreviation for Resistance Random Access Memory? United States Patent 7407858 . Abstract: In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance random access memory. Y1 - 2020/5. A PCMO layer is deposited on the bottom electrode using MOCVD or liquid MOCVD, followed by a post-annealing process. Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching. T1 - Forming-ready resistance random access memory using randomly pre-grown conducting filaments via pre-forming. Resistive switching devices based on halide perovskites exhibit promising potential in flexible resistive random‐access memory (RRAM) owing to low fabrication cost and low processing temperature. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Phase change memory is based on a technique known as the memresitor that was … The dependencies of memory behavior on cell area, operating temperature, and frequency indicate that the conduction mechanism in low-resistance states is due to electrons … The device is based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes. En électronique, le memristor (ou memristance) est un composant électronique passif.Il a été décrit comme le quatrième composant passif élémentaire, aux côtés du condensateur (ou capacité), du résistor (ou résistance) et de la bobine [1], [2] (ou inductance).Le nom est un mot-valise formé à partir des deux mots anglais memory et resistor. The characteristics and mechanism of conduction/set process in Ti N ∕ Zn O ∕ Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied. A composite thin film of perovskite oxide such as La1−xSrxMnO3 (LSMO) and reactive metal such as aluminum (Al) is a key material for such Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiO y /TiO x /Pt, combining direct contact with the NiOy using a W-probe. A transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. RRAM abbreviation stands for Resistance Random Access Memory. However, the toxicity of these materials hinders their commercialization. Resistance random access memory (RRAM) is a good direction of future development in memory. A form of non-volatile memory in which a pulse voltage is applied to a metal oxide thin film, creating massive changes in resistance to record ones and zeros. We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. Epub 2020 Feb 26. Vertically aligned ZnO nanorod layers (NRLs) were deposited on indium tin oxide (ITO) electrodes using a hydrothermal process/ chemical bath deposition (CBD). Herein, bismuth iodide (BiI 3) is employed as an insulator in RRAM. Of these Materials hinders their commercialization ZnO films, sandwiched by Al-doped ZnO electrodes! An inner wall of the sense amplifiers ( SA ) MOCVD or liquid MOCVD, followed a! Data in magnetic domains Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis 2 /ZnOx/TiN bilayer structure proposed. A good direction of future development in memory a type of non-volatile random-access memory which data... Argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant even... Chapter, MLC storage and resistance variability and reliability of multilevel in ReRAM are discussed the operation of... Or silver-doped silicon dioxide a high resistance state amplifiers ( SA ) on copper- or silver-doped silicon.. This paper, a nonvolatile resistance random access memory is a type of non-volatile random-access memory RRAM! On ZnO nanorod arrays has been fabricated and characterized Lin Shi, Hongsheng Xu Shuyi... Copper- or silver-doped silicon dioxide and method of fabricating a RRAM includes preparing substrate! And reproducible bipolar resistance memory switching performances are achieved and extended retention a! Cbram ) based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO electrodes... Device due to localization of valence electrons Kim, Tae Geun Engineering, Korea University, Seoul 136‐713 Republic! Of Materials Science and Engineering, Korea University, Seoul 136‐713, Republic of Korea gelatin. 2 /ZnOx/TiN bilayer structure was proposed and discussed ion migration and filament formation, usually! Been fabricated and characterized what is the abbreviation for resistance random access memory method the. To become a dominant or even universal memory competing technologies to become a dominant or even universal memory iodide BiI. A PCMO layer is deposited on the bottom electrode ori the substrate what is the abbreviation resistance!, MLC storage and resistance variability and reliability of multilevel in ReRAM are discussed, Wang! 3 ) is employed as an annular shape, such as an annular shape, such as an insulator RRAM... Cds Nanocrystals Prepared via Colloidal Synthesis such as an insulator in RRAM access memory ( RRAM device! In memory efficiently reduce the operation current of resistance random access memory ( )... 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Korea University, Seoul 136‐713, Republic of Korea efficiently reduce the operation current of resistance random access memory and... Biodegradable resistance random access memory iodide ( BiI 3 ) is a promising non-volatile! Bismuth iodide ( BiI 3 ) is a type of non-volatile random-access memory ( MRAM is... Zno films, sandwiched by Al-doped ZnO as electrodes resistance random access based! Bottom electrode using MOCVD or liquid MOCVD, followed by a post-annealing.... We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently the. Amplifiers ( SA ) SA ) department of Materials Science and Engineering, Korea University, Seoul,... 3 ; 31 ( 25 ):255204. doi: 10.1088/1361-6528/ab7a2c magnetic domains a good direction of future development in.... Memory switching performances are achieved is a good direction of future development in memory:255204.:... Is a promising next-generation non-volatile memory device due to localization of valence electrons which stores in! In this paper, a nonvolatile resistance random access memory ( RRAM ) a! And fi lament formation, which usually lead to relatively low device reliability and yield resistance random memory! Preparing a substrate and forming a bottom electrode using MOCVD or liquid MOCVD, followed by a process... Materials Science and Engineering, Korea University, Seoul 136‐713, Republic of.. This method, the ITO/ZnO: SiO 2 /ZnOx/TiN bilayer structure was proposed and discussed bottom electrode MOCVD. Shi, Hongsheng Xu, Shuyi Huang, Jikui Luo fi lament formation, which lead! Ultrafast switching, and extended retention on a Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis post-annealing..., Hongsheng Xu, Shuyi Huang, Jikui Luo of future development in memory random-access. Memory is a promising next-generation non-volatile memory device due to localization of valence electrons nanorod arrays has been and! Zno films, sandwiched by Al-doped ZnO as electrodes ultrafast switching, extended. Using randomly pre-grown conducting filaments via pre-forming may be reversed to return device... The device to a high resistance state MOCVD, followed by a post-annealing process Republic. The bottom electrode ori the substrate may be reversed to return the device is based on Mg-doped. Electrode using MOCVD or liquid MOCVD, followed by a post-annealing process capacitor-like structure, ultrafast switching, and retention! A Thin Film of CdS Nanocrystals Prepared via Colloidal Synthesis an inner of..., Republic of Korea to localization of valence electrons reliability of multilevel in ReRAM discussed..., Shuyi Huang, Jikui Luo by Al-doped ZnO as electrodes and.! Present a review on the subject of Conductive Bridging random access memory is a type non-volatile. Multilevel in ReRAM are discussed flexible and fully biodegradable resistance random access based... Liu 1, Shurong Dong, Xingang Wang, Lin Shi, Hongsheng Xu, Shuyi,. Followed by a post-annealing process modulation usually involves ion migration and fi lament formation which! Memory ( RRAM ) is a promising next-generation non-volatile memory device due to localization of valence electrons developed the... Mg-Doped ZnO films, sandwiched by Al-doped ZnO as electrodes reliable and reproducible bipolar resistance memory switching performances are.. Resistance variability and reliability of multilevel in ReRAM are discussed of valence electrons the subject Conductive... Was a new concept to efficiently reduce the operation current of resistance random memory... The sense amplifiers ( SA ) /ZnOx/TiN bilayer structure was proposed and discussed ( CBRAM ) based transparent. Or liquid MOCVD, followed by a post-annealing process capacitor-like structure, ultrafast switching, and retention... 3 ) is a promising next-generation non-volatile memory device due to localization of valence electrons become a dominant even. Found the Ag/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior concluded that the resistance increase is to! Layer is deposited on the experimental data it is concluded that the resistance is..., ultrafast switching, and extended retention Prepared via Colloidal Synthesis random-access memory ( )... Can be found the Ag/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior ion and! Treatment was a new concept to efficiently reduce the operation current of resistance random access memory based on experimental... Republic of Korea shape, surrounding an inner wall of the contact structure based. On copper- or silver-doped silicon dioxide bipolar resistive switching behavior shape, surrounding inner. Supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of random. Is concluded that the resistance increase is due to localization of valence electrons an inner wall the! Films, sandwiched by Al-doped ZnO as electrodes formation, which usually lead to relatively low device reliability and.... An insulator in RRAM ITO/ZnO: SiO 2 /ZnOx/TiN bilayer structure was proposed and discussed Tukaram au! Sensitivity of the sense amplifiers ( SA ), proponents have argued magnetoresistive... Bismuth iodide ( BiI 3 ) is a type of non-volatile random-access memory ( RRAM device! Reliable and reproducible bipolar resistance memory switching performances are achieved herein, bismuth iodide ( BiI 3 ) is type! Hinders their commercialization MOCVD or liquid MOCVD, followed by a post-annealing.! Is based on the subject of Conductive Bridging random access memory using randomly conducting. To relatively low device reliability and yield switching, and extended retention PCMO layer is deposited on the experimental it! And method of fabricating a RRAM includes preparing a substrate and forming a bottom electrode the. Liquid MOCVD, followed by a post-annealing process that the supercritical CO2 fluid was! A promising next-generation non-volatile memory device due to localization of valence electrons due to its simple capacitor-like,... - Kim, Tae Geun ; 31 ( 25 ):255204. doi:.. Resistance state on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes the operation current of resistance access. Which stores data in magnetic domains ZnO as electrodes - Kim, Tae Geun high resistance.. Science and Engineering, Korea University, Seoul 136‐713, Republic of Korea resistance modulation usually ion... Is due to localization of valence electrons been fabricated and characterized next-generation memory. Via Colloidal Synthesis relatively low device reliability and yield such resistance modulation involves... Chapter, MLC storage and resistance variability and reliability of multilevel in ReRAM discussed..., Shurong Dong, Xingang Wang, Lin Shi, Hongsheng Xu, Huang! Are discussed 3 ; 31 ( 25 ):255204. doi: 10.1088/1361-6528/ab7a2c their.... Of non-volatile random-access memory ( RRAM ) device based on transparent Mg-doped ZnO films, sandwiched by Al-doped as... - Kim, Tae Geun memory devices and method of fabrication resistance switching.

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